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| NTD6600N Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK Features * Source-to-Drain Diode Recovery Time Comparable to a * * * Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb-Free Packages are Available V(BR)DSS 100 V http://onsemi.com RDS(on) TYP 118 mW @ 5.0 V ID MAX 12 A Typical Applications * PWM Motor Controls * Power Supplies * Converters MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Source Voltage (RGS = 1.0 MW) Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C Drain Current - Continuous @ TA =100C Drain Current - Pulsed (Note 3) Total Power Dissipation Derate above 25C Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Temperature for Soldering Purposes, (1/8 from case for 10 s) Symbol VDSS VDGR VGS ID ID IDM PD Value 100 100 20 12 9.0 44 56.6 0.38 1.76 1.28 -55 to +175 72 Unit Vdc Vdc Vdc Adc Apk W W/C W W C mJ 4 C/W RqJC RqJA RqJA TL 2.65 85 117 260 C 1 12 3 4 G N-Channel D S MARKING DIAGRAMS 4 Drain DPAK CASE 369C (Surface Mounted) STYLE 2 YWW NT 6600G 4 Drain DPAK-3 CASE 369D (Straight Lead) STYLE 2 YWW NT 6600G 123 Gate Drain Source Y WW NT6600 G = Year = Work Week = Device Code = Pb-Free Package TJ, Tstg EAS 2 1 3 Drain Gate Source 2 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2007 1 March, 2007 - Rev. 4 Publication Order Number: NTD6600N/D NTD6600N ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) Drain-to-Source On-Voltage (VGS = 5.0 Vdc, ID = 12 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4 & 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge BODY-DRAIN DIODE RATINGS (Note 4) Diode Forward On-Voltage Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR - - - - - - 0.90 0.80 80 50 30 0.240 1.4 - - - - - mC Vdc ns (VDS = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc) (VDD = 80 Vdc, ID = 6.0 Adc, VGS = 5.0 Vdc, RG = 9.1 W) td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - 10.5 75 26 50 11.3 1.9 7.4 20 140 40 90 20 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 463 116 36 700 225 75 pF VGS(th) 1.0 - RDS(on) VDS(on) gFS - - - 1.5 -4.4 118 1.5 10 2.0 - 146 2.2 - Vdc mV/C mW Vdc mhos V(BR)DSS 100 IDSS - - IGSS - - - - 1.0 10 100 nAdc - - mAdc Vdc Symbol Min Typ Max Unit ORDERING INFORMATION Device NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600NT4G Package DPAK DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) 2500 Tape & Reel 75 Units/Rail Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD6600N TYPICAL CHARACTERISTICS 24 VGS = 9 V ID, DRAIN CURRENT (AMPS) 21 18 15 3.4 V 12 9 6 3 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2.6 V 3V 10 V 4.2 V 5.5 V 4V 3.8 V TJ = 25C ID, DRAIN CURRENT (AMPS) 25 VDS 10 V 20 15 10 TJ = 150C 5 TJ = -55C TJ = 25C 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4 VGS = 5 V 0.3 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 Figure 2. Transfer Characteristics TJ = 25C 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0 4 8 12 16 20 24 VGS = 10 V VGS = 5 V TJ = 150C 0.2 TJ = 25C 0.1 TJ = -55C 0 0 4 8 ID, DRAIN CURRENT (A) 12 16 ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Drain Current and Temperature 2.5 ID = 12 A 2.25 V = 5 V GS IDSS, LEAKAGE (nA) 2.0 1.75 1.5 1.25 1.0 0.75 0.5 -50 -25 0 25 50 75 100 125 150 175 10 0 1000 10000 Figure 4. On-Resistance versus Drain Current and Temperature VGS = 0 V TJ = 150C 100 TJ = 125C 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTD6600N TYPICAL CHARACTERISTICS VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 1500 Ciss 1250 C, CAPACITANCE (pF) 1000 750 Crss 500 250 0 10 Ciss TJ = 25C VDS = 0 V VGS = 0 V 8 VDS 6 QT 4 Q1 Q2 2 ID = 12 A TJ = 25C 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) VGS 100 90 80 70 60 50 40 30 20 10 0 18 Coss Crss 5 0 5 10 15 20 25 VGS VDS DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 12 IS, SOURCE CURRENT (AMPS) 1000 VDS = 80 V ID = 6 A VGS = 5 V t, TIME (ns) 100 tr tf td(off) 10 td(on) VGS = 0 V 10 8 6 4 2 0 TJ = 25C 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.25 0.5 0.75 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN -TO - SOURCE AVALANCE ENGERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 10 ms 10 100 ms 1.0 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1.0 10 1 ms 10 ms dc 80 70 60 50 40 30 20 10 0 25 Figure 10. Diode Forward Voltage versus Current ID = 12 A 100 100 1000 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD6600N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTD6600N PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- B V R 4 Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTD6600N/D |
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